1999 GaAs Reliability Workshop

proceedings : October 17, 1999, Monterey, California
  • 146 Pages
  • 1.73 MB
  • 158 Downloads
  • English
by
IEEE , Piscataway, New Jersey
Gallium arsenide semiconductors -- Congresses., Semiconductors -- Reliability -- Congresses., Semiconductors -- Materials -- Congre
Statementsponsored by JEDEC JC-14.7 Committee on GaAs Reliability and Quality Standards ; in cooperation with the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc.
GenreCongresses.
ContributionsJEDEC JC-14.7 Committee on GaAs Reliability and Quality Standards., IEEE Electron Devices Society.
Classifications
LC ClassificationsTK7871.15.G3 G32 1999
The Physical Object
Paginationvii, 146 p. :
ID Numbers
Open LibraryOL3965805M
ISBN 100790801000, 0780350677
LC Control Number2001270756
OCLC/WorldCa45161138

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() GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors. In: Ueda O., Pearton S. (eds) Materials and Reliability Handbook for Semiconductor Optical and Electron : F. Ren, E. Douglas, Stephen J. Pearton. GaAs IC reliability returns: a story of abuse, in GaAs REL Workshop, Miami Beach, FL, 4 Octpp.

30–34 Proving GaAs reliability with IC element testing Electromigration – a brief survey Author: William Roesch. Sugahara et al., ''Improved reliability of AlGaAs/GaAs HBTs with a strain-relaxed base,'' IEEE GaAs IC Symposium Technical Digest, San Jose, CA,pp.

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Chapter 4 FAILURE MECHANISMS IN COMPOUND SEMICONDUCTOR ELECTRON DEVICES E Fantini, M. Borgarino, D. Died Dipartimento di Scienze dell' Ingegneria, Univesita di Modena e Reggio, Emilia, Modena, Italy R.

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Improvements in photovoltaics and emitters, in terms of reliability, size, weight, and energy efficiency, will translate directly into increased capability and, perhaps, lower cost. 27th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) May Low Frequency Noise-Based Monitoring of the Effects of RF and DC Stress on AlGaN/GaN MODFETs.

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Reliability Assessment of Advanced Flip Chip in Cryogenic Temperatures Author: Rajeshuni Ramesham Document Date: 05/23/ Reliability Characterization of GaAs FET Test Structures for Applications in RF/Microwave Modules Author: Ashok Sharma Document Date: 10/28/ Reliability considerations for using PEMS in Military Applications Author.

Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu, “A novel approach for determining reliability of AlGaAs/GaAs single HBTs from low-frequency noise characteristics,” Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen, The.

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on Microwave Theory and. Shareable Link. Use the link below to share a full-text version of this article with your friends and colleagues.

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Hunt. FILM UNIFORMITY IN BOND AND ETCH-BACK SILICON ON INSULATOR (BE-SOI). Proceedings of the IEEE SOS/SOI. Curriculum Vitae of Professor Stephen J. Pearton First to identify the effect of hydrogen passivation on device reliability in GaAs devices (). His review article on Hydrogen in Crystalline Semiconductors has been cited over times and the book on a similar topic over times and he has been invited to give plenary talks.

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The development of test standards and understanding the underlying physics of different failure modes has always been Cited by: 1. “Tunable transmission gap in graphene p-n junction”, Redwan N. Sajjad and Avik Ghosh, International Semiconductor Device Research Symposium (ISDRS), Maryland, “Comparative material issues for fast reliable switching in STT-RAMs”, K.

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Ye, C. Basaran, D. Hopkins, and A. Cartwright, “Reliability of Solder Joints Under Electrical Stressing -Strain Evolution of Solder Joints,” Proceedings from the 8th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), CA, – ().